Low-power, 10-Gbps 1.5-Vpp differential CMOS driver for a silicon electro-optic ring modulator

摘要

We present a novel driver circuit enabling electro-optic modulation with high extinction ratio from a co-designed silicon ring modulator. The driver circuit provides an asymmetric differential output at 10Gbps with a voltage swing up to 1.5V(pp) from a single 1.0V supply, maximizing the resonance-wavelength shift of depletion-type ring modulators while avoiding carrier injection. A test chip containing 4 reconfigurable driver circuits was fabricated in 40nm CMOS technology. The measured energy consumption for driving a 100fF capacitive load at 10Gbps was as low as 125fJ/bit and 220fJ/bit at 1V(pp) and 1.5V(pp) respectively. After flip-chip integration with ring modulators on a silicon-photonics chip, the power consumption was measured to be 210fJ/bit and 350fJ/bit respectively.